SCT2750NYTB

Mfr.Part # : SCT2750NYTB

Manufacturer : ROHM Semiconductor

Description : SICFET N-CH 1700V 5.9A TO268

Stock : 1548

Product Category : Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C : 5.9A (Tc)

Drain to Source Voltage (Vdss) : 1700 V

Drive Voltage (Max Rds On, Min Rds On) : 18V

FET Type : N-Channel

Gate Charge (Qg) (Max) @ Vgs : 17 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds : 275 pF @ 800 V

Mounting Type : Surface Mount

Operating Temperature : 175°C (TJ)

Package / Case : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Power Dissipation (Max) : 57W (Tc)

Product Status : Active

Rds On (Max) @ Id, Vgs : 975mOhm @ 1.7A, 18V

Supplier Device Package : TO-268

Technology : SiCFET (Silicon Carbide)

Vgs (Max) : +22V, -6V

Vgs(th) (Max) @ Id : 4V @ 630µA