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RN1910FE,LF(CT

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RN1910FE,LF(CT

Mfr.Part # : RN1910FE,LF(CT

Manufacturer : Toshiba Electronic Devices and Storage Corporation

Description : TRANS 2NPN PREBIAS 0.1W ES6

Stock : 3280

Product Category : Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector (Ic) (Max) : 100mA

Current - Collector Cutoff (Max) : 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V

Frequency - Transition : 250MHz

Mounting Type : Surface Mount

Package / Case : SOT-563, SOT-666

Power - Max : 100mW

Product Status : Active

Resistor - Base (R1) : 4.7kOhms

Supplier Device Package : ES6

Transistor Type : 2 NPN - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) : 50V

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