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Mfr.Part # : MT3S111TU,LF
Manufacturer : Toshiba Electronic Devices and Storage Corporation
Description : RF SIGE NPN BIPOLAR TRANSISTOR N
Stock : 1900
Product Category : Transistors - Bipolar (BJT) - RF
Current - Collector (Ic) (Max) : 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 30mA, 5V
Frequency - Transition : 10GHz
Gain : 12.5dB
Mounting Type : Surface Mount
Noise Figure (dB Typ @ f) : 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Operating Temperature : 150°C (TJ)
Package / Case : 3-SMD, Flat Lead
Power - Max : 800mW
Product Status : Active
Supplier Device Package : UFM
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 6V
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MT3S111TU,LF Images |